| 品牌：NANYA/南亚 | 型号：NT5TU64M16GG-AC | 功率：50W |
NT5TU256M4GE / NT5TU128M8GE / NT5TU64M16GG
1Gb DDR2 SDRAM
2 REV 1.0
CONSUMER DRAM Dec / 2009
漏 NANYA TECHNOLOGY CORP. All rights reserved NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice. Description The 1giga bit (1Gb) Double-Data-Rate-2 (DDR2) DRAMs is a high-speed CMOS Double Data Rate 2 SDRAM containing 1,073,741,824 bits. It is internally configured as an octal-bank DRAM. The 1Gb chip is organized as 32Mbit x 4 I/O x 8 bank, 16Mbit x 8 I/O x 8 bank or 8Mbit x 16 I/O x 8 bank device. These synchronous devices achieve high speed double-data-rate transfer rates of up to 800 Mb/sec/pin for general appli-cations. The chip is designed to comply with all key DDR2 DRAM key features: (1) posted CAS with additive latency, (2) write latency = read latency -1, (3) normal and weak strength data-output driver, (4) variable data-output impedance adjustment and (5) an ODT (On-Die Termination) function. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and 飦冿亱 falling). All I/Os are synchronized with a single ended DQS or differential DQS pair in a source synchronous fashion. A 14 bit address bus for x4/x8 organized components and A 13 bit address bus for x16 component is used to convey row, column, and bank address devices. These devices operate with a single 1.8V 卤 0.1V power supply and are available in BGA packages.
