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Æ·ÅÆ£ºINITIO | ÐͺţºBF1005 | ¹¦ÂÊ£º60W |
Feb-18-2004
1
BF1005S...
Silicon N-Channel MOSFET Tetrode• For low noise, high gain controlled input stages up to 1 GHz• Operating voltage 5 V• Integrated biasing network
EHA07215
GND
G1
G2Drain
AGCHFInput
HF Output+DC
ESD: Electrostatic discharge sensitive device, observe handling precaution!
TypePackagePin ConfigurationMarkingBF1005S BF1005SR BF1005SWSOT143 SOT143R SOT343
1=S 1=D
1=D
2=D 2=S 2=S
3=G2 3=G1 3=G1
4=G1 4=G2 4=G2
- - -- - -
NZs NZs NZ
Maximum RatingsParameter
SymbolValueUnitDrain-source voltageVDS8VContinuous drain currentID25mAGate 1/ gate 2-source current±IG1/2SM10Gate 1 (external biasing)+VG1SE3VTotal power dissipation
TS ≤ 76 °C, BF1005S, BF1005SR TS ≤ 94 °C, BF1005SW Ptot
200200
mW
Storage temperatureTstg-55 ... 150°C
Channel temperatureTch
15
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