| 品牌：ESMT | 型号：M15T1G1664A-DEBG2CS | 类型：存储器 |
| 存储容量：1G | 针脚数：64*16 | 封装：BGA |
| 批号：2018+ | 应用领域：汽车电子、 网络通信、 医疗电子、 智能家居、 家用电器、 物联网IoT |
Feature |
Interface and Power Supply
SSTL_135: VDD/VDDQ = 1.35V(-0.067V/+0.1V)
SSTL_15: VDD/VDDQ = 1.5V(卤0.075V)
JEDEC DDR3(L) Compliant
8n Prefetch Architecture
Differential Clock (CK/ CK ) and Data Strobe (DQS/ DQS )
Double-data rate on DQs, DQS and DM
Data Integrity
Auto Refresh and Self Refresh Modes
Power Saving Mode
Partial Array Self Refresh(PASR) Power Down Mode
Signal Integrity
Configurable DS for system compatibility Configurable On-Die Termination
ZQ Calibration for DS/ODT impedance accuracy via external ZQ pad (240 ohm 卤 1%)
Signal Synchronization
Write Leveling via MR settings Read Leveling via MPR
Programmable Functions
CAS Latency (5/6/7/8/9/10/11/12/13) CAS Write Latency (5/6/7/8/9)
Additive Latency (0/CL-1/CL-2)
Write Recovery Time (5/6/7/8/10/12/14/16) Burst Type (Sequential/Interleaved)
Burst Length (BL8/BC4/BC4 or 8 on the fly)
Self Refresh Temperature Range(Normal/Extended) Output Driver Impedance (34/40)
On-Die Termination of Rtt_Nom(20/30/40/60/120) On-Die Termination of Rtt_WR(60/120)
Precharge Power Down (slow/fast)
Ordering Information
Product ID | Max Freq. | VDD | Data Rate | Package | Comments | |
(CL-tRCD-tRP) | ||||||
M15T1G1664A鈥揃DBG2C | 800MHz | 1.35V/1.5V | DDR3(L)-1600 (11-11-11) | 96 ball BGA | Pb-free | |
(7.5mmx13.5mm) | ||||||
M15T1G1664A鈥揇EBG2C | 933MHz | 1.35V/1.5V | DDR3(L)-1866 (13-13-13) | Pb-free | ||
M15T1G1664A鈥揃DBG2CS | 800MHz | 1.35V/1.5V | DDR3(L)-1600 (11-11-11) | 96 ball BGA | Pb-free | |
(7.5mmx13mm) | ||||||
M15T1G1664A鈥揇EBG2CS | 933MHz | 1.35V/1.5V | DDR3(L)-1866 (13-13-13) | Pb-free | ||
