| 品牌：ESMT | 型号：M15T1G1664A-DEBG2CS | 类型：存储器 |
| 存储容量：1G | 封装：DDR3 | 系列：DDR3 |
| 是否跨境货源：否 | 包装：真空 |
M15T1G1664A-DEBG2CS
ESMT M15F1G1664A (2C) Elite Semiconductor Memory Technology Inc Publication Date : Mar. 2017 Revision : 1.2 2/130 Description The 1Gb Double-Data-Rate-3 (DDR3) DRAM is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 1Gb chip is organized as 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK falling). All I/Os are synchronized with a differential DQS pair in a source synchronous fashion. These devices operate with a single 1.5V 卤 0.075V power supply and are available in BGA packages.
